姓 名： 闫小琴
所在系所： 材物系
职 务： 干部
职 称： 教授
研究领域
（1）纳米功能材料与能量转换器件及存储系统；
（2）纳米材料的图案化制备；
（3）新材料的Raman光谱研究。
教育背景
1997年和2000年获太原理工大学材料科学系学士学位和硕士学位
2004年获中科院物理所理学博士学位
2004-2007年在日本东北大学金属材料研究所做博士后研究。
主要论文著作
1. Qijie Liang, Xiaoqin Yan, Zheng Zhang, Qingliang Liao, Yinli Zhao, Guangjie Zhang, YouSong Gu, Yue Zhang, Functional triboelectric generator as self-powered vibration sensor with contact mode and non-contact mode, Nano Energy, in press
2. Yue Zhang, Xiaoqin Yan, Ya Yang, YunHua Huang, Qingliang Liao, Junjie Qi, Scanning probe study on piezotronic effect in ZnO nanomaterials and nanodevices, Adv. Mater., 2012, 24(34): 4647-4655
3. Pei Lin, Xiaoqin Yan, Zheng Zhang, Yanwei Shen,Yanguang Zhao, Zhiming Bai and Yue Zhang, Self-Powered UV Photosensor Based on PEDOT:PSS/ZnO Micro/Nanowire with Strain-Modulated Photoresponse, ACS Applied Materials & Interfaces, 2013, 5, 3671-3676.
4. Chen, X., Yan, X., Bai, Z., Lin, P., Shen, Y., Zheng, X., Feng, Y., Zhang, Y., Facile fabrication of large-scale patterned ZnO nanorod arrays with tunable arrangement, period and morphology. Cryst. Eng. Comm. 2013, 15 (39), 8022-8028
5. Bai, Z., Yan, X., Chen, X., Cui, Y., Lin, P., Shen, Y., Zhang, Y., Ultraviolet and visible photoresponse properties of a ZnO/Si heterojunction at zero bias. RSC Advances 2013, 3 (39), 17682-17688
6. Chen, X., Yan, X., Bai, Z., Shen, Y., Wang, Z., Dong, X., Duan, X., Zhang, Y., High-throughput fabrication of large-scale highly ordered ZnO nanorod arrays via three-beam interference lithography. CrystEngComm 2013, 15 (42), 8416-8421.
7. Yanguang Zhao, Xiaoqin Yan, Zhuo Kang, Xiaofei Fang, Xin Zheng, Lanqing Zhao, Hongwu Du, Yue Zhang, Zinc oxide nanowires based electrochemical biosensor for L-lactic acid amperometric detection, J. Nanopart. Res. 2014, 16: 2398.
8. ZhimingBai, Xiaoqin Yan, Xiang Chen, Hanshuo Liu, YanweiShen and Yue Zhang, ZnO nanowire array ultraviolet photodetectors with self-powered properties, Current Applied Physics, 2013, 13,165-169
9. M. W. Chen, X. Q. Yan, Comment on “Grain boundary mediated plasticity in nanocrystalline nickel”, Science, 308, 356c (2005)
10. X. Q. Yan, Z. Tang, L. Zhang, J. J. Guo, C. Q. Jin, Y. Zhang, T. Goto, J. W. McCauley, and M. W. Chen, Depressurization amorphization of single-crystal boron carbide, Phys. Rev. Lett. 102, 075505 (2009).
11. X. Q. Yan, Y. S. Gu, X. M. Zhang, Y. H. Huang, J. J. Qi, Y. Zhang, T. Fujita, M. W. Chen, Doping effect on high-pressure structural stability of ZnO nanowires, J. Phys. Chem. C, 113, 1164-1167 (2009).
12. X. Q. Yan, W. J. Li, T. Goto and M. W. Chen, Raman spectroscopy of pressure-induced amorphous boron carbide, Applied Physics Letters, 88, 131905 (2006)
13. X. Q. Yan, X. M. Huang, S. Uda and M. W. Chen, Effect of heavy boron doping on pressure-induced phase transitions in single-crystal silicon, Applied Physics Letters, 87, 191911 (2005)
14. X. Q. Yan, W. Y. Zhou, L. F. Sun, Y. Gao, D. F. Liu, J. X. Wang, Z. P. Zhou, H. J. Yuan, L. Song, L. F. Liu, G. Wang, S. S. Xie, The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires, Journal of Physics and Chemistry of Solids, 66, 701 (2005)
15. X. Q. Yan, H. J. Yuan, J. X. Wang, D. F. Liu, Z. P. Zhou, Y. Gao, L. Song, L. F. Liu, W. Y. Zhou, G. Wang, S. S. Xie, Synthesis and characterization of a large amount of branched Ni2Si nanowires, Applied Physics A, 79, 1853 (2004)
